Temperature Driven Phase Transition at the Antimonene/Bi2Se3 van der Waals Heterostructure.

We report the discovery of a temperature-induced phase transition between the α and ß structures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the ß phase grows and prevails over the α phase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First-principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of freestanding α- and ß-antimonene only slightly differ, the ß phase is ultimately favored in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match.

Unexpected Rotamerism at the Origin of a Chessboard Supramolecular Assembly of Ruthenium Phthalocyanine.

We have investigated the formation and the properties of ultrathin films of ruthenium phthalocyanine (RuPc)2 vacuum deposited on graphite by scanning tunneling microscopy and synchrotron photoemission spectroscopy measurements, interpreted in close conjunction with ab initio simulations. Thanks to its unique dimeric structure connected by a direct Ru-Ru bond, (RuPc)2 can be found in two stable rotameric forms separated by a low-energy barrier. Such isomerism leads to a peculiar organization of the molecules in flat, horizontal layers on the graphite surface, characterized by a chessboard-like alternation of the two rotamers. Moreover, the molecules are vertically connected to form π-stacked columnar pillars of akin rotamers, compatible with the high conductivity measured in (RuPc)2 powders. Such features yield an unprecedented supramolecular assembly of phthalocyanine films, which could open interesting perspectives toward the realization of new architectures of organic electronic devices.

Self-Assembly of Graphene Nanoblisters Sealed to a Bare Metal Surface.

The possibility to intercalate noble gas atoms below epitaxial graphene monolayers coupled with the instability at high temperature of graphene on the surface of certain metals has been exploited to produce Ar-filled graphene nanosized blisters evenly distributed on the bare Ni(111) surface. We have followed in real time the self-assembling of the nanoblisters during the thermal annealing of the Gr/Ni(111) interface loaded with Ar and characterized their morphology and structure at the atomic scale. The nanoblisters contain Ar aggregates compressed at high pressure arranged below the graphene monolayer skin that is decoupled from the Ni substrate and sealed only at the periphery through stable C-Ni bonds. Their in-plane truncated triangular shapes are driven by the crystallographic directions of the Ni surface. The nonuniform strain revealed along the blister profile is explained by the inhomogeneous expansion of the flexible graphene lattice that adjusts to envelop the Ar atom stacks.

Silicon Reactivity at the Ag(111) Surface.

The modelization of silicene on Ag(111) is generally based on the assumption of a complete immiscibility between silicon and silver. However, there are recent reports that growth occurs inside the first layer of the Ag(111) terraces rather than on top of them. Here, we report on a combined density functional theory and scanning tunneling microscopy study unveiling the basic exchange mechanism between Si and the topmost layer Ag atoms and modeling the nucleation process. Our findings demonstrate that a strong Si-Ag interaction must be considered to properly describe the Si/Ag(111) interface.

Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons.

The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.

Detecting and localizing surface dynamics with STM: a study of the Sn/Ge(111) and Sn/Si(111) α-phase surfaces.

After almost three decades since the invention of the scanning tunnelling microscope (STM) its application to the study of dynamic processes at surfaces is attracting a great deal of interest due to its unique capacity to observe such processes at the atomic level. The α-phase of group IV adatoms on Ge(111) and Si(111) is the ideal playground for the analysis of critical phenomena and represents a prototype of a two-dimensional electron system exhibiting thermally activated peculiar Sn adatom dynamics. This paper will relate the study of adatom dynamics at the α-Sn/Ge(111) and α-Sn/Si(111) surfaces, discussing in detail the methods we used for such kinds of time-resolved measurements. The microscope tip was used to record the tunnelling current on top of an oscillating Sn adatom, keeping the feedback loop turned off. The dynamics of the adatoms is detected as telegraph noise present in the tunnelling versus time curves. With this method it is possible to increase the acquisition rate to the actual limit of the instrument electronics, excluding piezo movement and feedback circuitry response time. We put emphasis on the statistical data analysis which allows the localization of the sample areas that are involved in dynamical processes.

Metallic nature of the alpha-Sn/Ge(111) surface down to 2.5 K.

Low temperature (down to 2.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are presented to assess the nature of the alpha-Sn/Ge(111) surface. Bias-dependent STM and STS measurements have been used to demonstrate that such a surface preserves a metallic 3 x 3 reconstruction at very low temperature. A tip-surface interaction mechanism becomes active below about 20 K at the alpha-Sn/Ge(111) surface, resulting in an apparent unbuckled (sqrt[3] x sqrt[3]) reconstruction when filled states STM images are acquired with tunneling currents higher than 0.2 nA.

Evidence of Sn adatoms quantum tunneling at the alpha-Sn/Si(111) surface.

We present a low-temperature scanning tunneling microscopy study of the alpha-Sn/Si(111) surface that demonstrates the fluctuating behavior of the Sn adatoms. The dynamical fluctuation model, successfully applied in describing the alpha-Sn/Ge(111) surface, is proposed for the related alpha-Sn/Si(111) surface too, although with a much lower transition temperature. In addition, a new phenomenon appears responsible for the unexpected evidence that the average oscillation frequency remains constant at temperatures lower than 15 K, in contradiction to the Arrhenius law. We explain this phenomenon as quantum tunneling of Sn adatoms.

Direct observation of sn adatoms dynamical fluctuations at the Sn/Ge(111) surface.

The well-known low-temperature phase transition sqrt[3]xsqrt[3] to 3x3 for the 1/3 monolayer of Sn adatoms on the Ge(111) surface has been studied by scanning tunneling microscopy. The STM tip was used as a probe to record the tunneling current as a function of time on top of the Sn adatoms. The presence of steps on the current-time curves allowed the detection of fluctuating Sn atoms along the direction vertical to the substrate. We discuss the effect of temperature and surface defects on the frequency of the motion, finding consistency with the dynamical fluctuations model.

Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy.

In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition.